All MOSFET. AP15H06S Datasheet

 

AP15H06S Datasheet and Replacement


   Type Designator: AP15H06S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 145 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

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AP15H06S Datasheet (PDF)

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AP15H06S

AP15H06S 60V N+N-Channel Enhancement Mode MOSFET Description The AP15H06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =15A DS DR

Datasheet: AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , IRFP064N , AP4957A , AP65N06D , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , APG120N04NF , APG60N10S .

History: JMH65R190ACFDQ | JMSH1509PG

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