AP15H06S Datasheet. Specs and Replacement

Type Designator: AP15H06S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 145 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: SOP8

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AP15H06S datasheet

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AP15H06S

AP15H06S 60V N+N-Channel Enhancement Mode MOSFET Description The AP15H06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =15A DS D R ... See More ⇒

Detailed specifications: AP2301AI, AP2302AI, AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, IRF730, AP4957A, AP65N06D, AP65N06DF, AP6G03S, AP6P04S, AP8G06S, APG120N04NF, APG60N10S

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