All MOSFET. AP65N06D Datasheet

 

AP65N06D Datasheet and Replacement


   Type Designator: AP65N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252
 

 AP65N06D substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP65N06D Datasheet (PDF)

 ..1. Size:1844K  cn apm
 ap65n06d.pdf pdf_icon

AP65N06D

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS DR

 0.1. Size:1817K  cn apm
 ap65n06df.pdf pdf_icon

AP65N06D

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGTtechnology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS DR

Datasheet: AP3P06MI , AP4606B , AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , IRF3205 , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F .

History: JMSH0401ATL | AP80N06D

Keywords - AP65N06D MOSFET datasheet

 AP65N06D cross reference
 AP65N06D equivalent finder
 AP65N06D lookup
 AP65N06D substitution
 AP65N06D replacement

 

 
Back to Top

 


 
.