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AP65N06D Spec and Replacement


   Type Designator: AP65N06D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 52 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9.2 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252

 AP65N06D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP65N06D Specs

 ..1. Size:1844K  cn apm
 ap65n06d.pdf pdf_icon

AP65N06D

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R ... See More ⇒

 0.1. Size:1817K  cn apm
 ap65n06df.pdf pdf_icon

AP65N06D

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R ... See More ⇒

 7.1. Size:1552K  cn apm
 ap65n06nf.pdf pdf_icon

AP65N06D

AP65N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R ... See More ⇒

 8.1. Size:1522K  cn apm
 ap65n04df.pdf pdf_icon

AP65N06D

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS D R ... See More ⇒

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Detailed specifications: AP3P06MI , AP4606B , AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , IRF3205 , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F .

Keywords - AP65N06D MOSFET specs

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