AP65N06D Datasheet. Specs and Replacement

Type Designator: AP65N06D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.2 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO252

  📄📄 Copy 

AP65N06D substitution

- MOSFET ⓘ Cross-Reference Search

 

AP65N06D datasheet

 ..1. Size:1844K  cn apm
ap65n06d.pdf pdf_icon

AP65N06D

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R ... See More ⇒

 0.1. Size:1817K  cn apm
ap65n06df.pdf pdf_icon

AP65N06D

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R ... See More ⇒

 7.1. Size:1552K  cn apm
ap65n06nf.pdf pdf_icon

AP65N06D

AP65N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R ... See More ⇒

 8.1. Size:1522K  cn apm
ap65n04df.pdf pdf_icon

AP65N06D

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS D R ... See More ⇒

Detailed specifications: AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, AP15H06S, AP4957A, IRF3205, AP65N06DF, AP6G03S, AP6P04S, AP8G06S, APG120N04NF, APG60N10S, AP65R650, APJ30N65F

Keywords - AP65N06D MOSFET specs

 AP65N06D cross reference

 AP65N06D equivalent finder

 AP65N06D pdf lookup

 AP65N06D substitution

 AP65N06D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs