AP65N06D datasheet, аналоги, основные параметры

Наименование производителя: AP65N06D  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 52 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 65 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 9.2 ns

Cossⓘ - Выходная емкость: 189 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.013 Ohm

Тип корпуса: TO252

  📄📄 Копировать 

Аналог (замена) для AP65N06D

- подборⓘ MOSFET транзистора по параметрам

 

AP65N06D даташит

 ..1. Size:1844K  cn apm
 ap65n06d.pdf pdf_icon

AP65N06D

AP65N06D 60V N-Channel Enhancement Mode MOSFET Description The AP65N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 0.1. Size:1817K  cn apm
 ap65n06df.pdf pdf_icon

AP65N06D

AP65N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06DF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 7.1. Size:1552K  cn apm
 ap65n06nf.pdf pdf_icon

AP65N06D

AP65N06NF 60V N-Channel Enhancement Mode MOSFET Description The AP65N06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =65A DS D R

 8.1. Size:1522K  cn apm
 ap65n04df.pdf pdf_icon

AP65N06D

AP65N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP65N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =65A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, AP15H06S, AP4957A, IRF3205, AP65N06DF, AP6G03S, AP6P04S, AP8G06S, APG120N04NF, APG60N10S, AP65R650, APJ30N65F