All MOSFET. AP8G06S Datasheet

 

AP8G06S Datasheet and Replacement


   Type Designator: AP8G06S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5(7.7) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 34(20.1) nS
   Cossⓘ - Output Capacitance: 65(76) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052(0.1) Ohm
   Package: SOP8
 

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AP8G06S Datasheet (PDF)

 ..1. Size:2181K  cn apm
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AP8G06S

AP8G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP8G06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8.5A DS DR

 9.1. Size:2168K  cn apm
 ap8g04s.pdf pdf_icon

AP8G06S

AP8G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP8G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8.3A DS DR

Datasheet: AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , AP6P04S , IRF540N , APG120N04NF , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P .

History: IRFBC20

Keywords - AP8G06S MOSFET datasheet

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