AP8G06S Datasheet. Specs and Replacement
Type Designator: AP8G06S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.5(7.7) A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 34(20.1) nS
Cossⓘ - Output Capacitance: 65(76) pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052(0.1) Ohm
Package: SOP8
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AP8G06S datasheet
ap8g06s.pdf
AP8G06S 60V N+P-Channel Enhancement Mode MOSFET Description The AP8G06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8.5A DS D R ... See More ⇒
ap8g04s.pdf
AP8G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP8G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =8.3A DS D R ... See More ⇒
Detailed specifications: AP90N08NF, AP10G04S, AP15H06S, AP4957A, AP65N06D, AP65N06DF, AP6G03S, AP6P04S, IRF540N, APG120N04NF, APG60N10S, AP65R650, APJ30N65F, APJ30N65P, APJ30N65T, APJ50N65F, APJ50N65P
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