All MOSFET. APG120N04NF Datasheet

 

APG120N04NF Datasheet and Replacement


   Type Designator: APG120N04NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: PDFN5X6-8L
 

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APG120N04NF Datasheet (PDF)

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APG120N04NF

APG120N04NF 40V N-SGT Enhancement Mode MOSFET General Description APG120N04NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un

 9.1. Size:3062K  cn apm
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APG120N04NF

APG12N10D 100V N-SGT Enhancement Mode MOSFET General Description APG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

Datasheet: AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , IRF540 , APG60N10S , , , , , , , .

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