APG120N04NF MOSFET Datasheet: N-Ch, 40V, 120A. Full specification with pinout and replacement list

APG120N04NF Specs and Replacement

   Type Designator: APG120N04NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 1119 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: PDFN5X6-8L

APG120N04NF substitution

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APG120N04NF datasheet

..1. Size:2679K cn apm
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APG120N04NF 40V N-SGT Enhancement Mode MOSFET General Description APG120N04NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un... See More ⇒

7.1. Size:1614K cn apm
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APG120N12NF 100V N-SGT Enhancement Mode MOSFET Description The APG120N12NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V I =120 A DS D R ... See More ⇒

7.2. Size:1308K cn apm
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APG120N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG120N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =120A DS D R ... See More ⇒

9.1. Size:3062K cn apm
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APG12N10D 100V N-SGT Enhancement Mode MOSFET General Description APG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo... See More ⇒

Detailed specifications: AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , IRF540 , APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P , APJ50N65T .