All MOSFET. APG60N10S Datasheet

 

APG60N10S Datasheet and Replacement


   Type Designator: APG60N10S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 305 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP8
 

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APG60N10S Datasheet (PDF)

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APG60N10S

APG60N10S 100V N-SGT Enhancement Mode MOSFET General Description APG60N10S use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

Datasheet: AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , AP6P04S , AP8G06S , APG120N04NF , 50N06 , , , , , , , , .

History: CEM2281

Keywords - APG60N10S MOSFET datasheet

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