APJ30N65P Datasheet. Specs and Replacement

Type Designator: APJ30N65P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21 nS

Cossⓘ - Output Capacitance: 30.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.34 Ohm

Package: TO220

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APJ30N65P datasheet

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APJ30N65P

APJ30N65FIPIT (AP65R340) 650V N-Channel Enhancement Mode MOSFET Description The APJ30N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 740V... See More ⇒

Detailed specifications: AP65N06DF, AP6G03S, AP6P04S, AP8G06S, APG120N04NF, APG60N10S, AP65R650, APJ30N65F, IRFP460, APJ30N65T, APJ50N65F, APJ50N65P, APJ50N65T, AP65R190, APN9N50D, APJ14N65D, APJ14N65F

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