APJ14N65D Specs and Replacement
Type Designator: APJ14N65D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25.2 nS
Cossⓘ - Output Capacitance: 19.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO252
APJ14N65D substitution
APJ14N65D datasheet
apj14n65d ap65r650.pdf
APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V IDM ... See More ⇒
apj14n65f apj14n65p apj14n65t ap65r650.pdf
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V... See More ⇒
Detailed specifications: APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P , APJ50N65T , AP65R190 , APN9N50D , IRFB4227 , APJ14N65F , APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD , AP100N03D , AP100N03P , AP100N03T .
History: AP65R650 | CEB16N10 | APG60N10S
Keywords - APJ14N65D MOSFET specs
APJ14N65D cross reference
APJ14N65D equivalent finder
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APJ14N65D substitution
APJ14N65D replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AP65R650 | CEB16N10 | APG60N10S
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