All MOSFET. APJ14N65D Datasheet

 

APJ14N65D Datasheet and Replacement


   Type Designator: APJ14N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.2 nS
   Cossⓘ - Output Capacitance: 19.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO252
 

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APJ14N65D Datasheet (PDF)

 ..1. Size:1921K  cn apm
 apj14n65d ap65r650.pdf pdf_icon

APJ14N65D

APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V IDM

 6.1. Size:1818K  cn apm
 apj14n65f apj14n65p apj14n65t ap65r650.pdf pdf_icon

APJ14N65D

APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V

Datasheet: APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P , APJ50N65T , AP65R190 , APN9N50D , IRF3710 , APJ14N65F , APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD , AP100N03D , AP100N03P , AP100N03T .

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