APJ14N65D Datasheet. Specs and Replacement

Type Designator: APJ14N65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.2 nS

Cossⓘ - Output Capacitance: 19.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO252

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APJ14N65D datasheet

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 apj14n65d ap65r650.pdf pdf_icon

APJ14N65D

APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V IDM ... See More ⇒

 6.1. Size:1818K  cn apm
 apj14n65f apj14n65p apj14n65t ap65r650.pdf pdf_icon

APJ14N65D

APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V... See More ⇒

Detailed specifications: APJ30N65F, APJ30N65P, APJ30N65T, APJ50N65F, APJ50N65P, APJ50N65T, AP65R190, APN9N50D, AON6414A, APJ14N65F, APJ14N65P, APJ14N65T, AP01P10I, AP100N03AD, AP100N03D, AP100N03P, AP100N03T

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