APJ14N65T Datasheet. Specs and Replacement
Type Designator: APJ14N65T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 25.2 nS
Cossⓘ - Output Capacitance: 19.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO263
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APJ14N65T substitution
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APJ14N65T datasheet
apj14n65f apj14n65p apj14n65t ap65r650.pdf
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V... See More ⇒
apj14n65d ap65r650.pdf
APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V IDM ... See More ⇒
Detailed specifications: APJ50N65F, APJ50N65P, APJ50N65T, AP65R190, APN9N50D, APJ14N65D, APJ14N65F, APJ14N65P, 10N60, AP01P10I, AP100N03AD, AP100N03D, AP100N03P, AP100N03T, AP100N03Y, AP100N04D, AP100N04NF
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History: APJ14N65D | IPI80P03P4L-07 | 2SK4057
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