APJ10N65T Datasheet. Specs and Replacement
Type Designator: APJ10N65T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 26.4 nS
Cossⓘ - Output Capacitance: 13.7 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220
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APJ10N65T datasheet
apj10n65f apj10n65t apj10n65p ap65r950.pdf
APJ10N65FITIP (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65F/T/P is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V... See More ⇒
apj10n65d ap65r950.pdf
APJ10N65D (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ10N65D is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 720V IDM =10A... See More ⇒
Detailed specifications: APG60N10P, APG60N10T, APG80N10NF, APG80N10P, APG80N10T, APJ10N65D, AP65R950, APJ10N65F, AO3401, APJ10N65P, AP100P03D, AP100P04D, AP10G03S, AP10G06NF, AP10G06S, AP10H04DF, AP10H10S
Keywords - APJ10N65T MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
MOSFET Parameters. How They Affect Each Other
History: AP100P04D | SI7716ADN | FCPF600N65S3R0L
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