APG130N06T Specs and Replacement
Type Designator: APG130N06T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 168 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.7 nS
Cossⓘ - Output Capacitance: 1250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO263
APG130N06T substitution
APG130N06T datasheet
apg130n06d.pdf
APG130N06D 60V N-SGT Enhancement Mode MOSFET General Description APG130N06D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unif... See More ⇒
apg130n06nf.pdf
APG130N06NF 60V N-SGT Enhancement Mode MOSFET General Description APG130N06NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un... See More ⇒
Detailed specifications: AP10N06MSI , APG40N10D , APG40N10DF , APG40N10NF , APG40N10S , APG60N10D , APG60N10NF , APG130N06P , BS170 , APG130N06F , APG180N04NF , APG20N06S , AP10N06S , AP10N10D , AP10N10S , AP10N15D , AP10N65F .
Keywords - APG130N06T MOSFET specs
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APG130N06T replacement
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