DMN3200U Specs and Replacement

Type Designator: DMN3200U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: SOT23

DMN3200U substitution

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DMN3200U datasheet

 ..1. Size:146K  diodes
dmn3200u.pdf pdf_icon

DMN3200U

DMN3200U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 90 m @ VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 110 m @ VGS = 2.5V Moisture Sensitivity Level 1 per J-... See More ⇒

 ..2. Size:128K  tysemi
dmn3200u.pdf pdf_icon

DMN3200U

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 9.1. Size:341K  diodes
dmn32d4sdw.pdf pdf_icon

DMN3200U

DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 0.4 @ VGS = 10V 0.65A Fast Switching Speed 30V ESD Protected Gate 0.7 @ VGS = 4.5V 0.52A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G... See More ⇒

 9.2. Size:274K  diodes
dmn32d2ldf.pdf pdf_icon

DMN3200U

DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Common Source Dual N-Channel MOSFET Case SOT-353 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold... See More ⇒

Detailed specifications: DMN3051LDM, DMN3052L, DMN3052LSS, DMN3112S, DMN3112SSS, DMN3115UDM, DMN3150L, DMN3150LW, SI2302, DMN32D2LDF, DMN32D2LFB4, DMN32D2LV, DMN3300U, DMN3404L, DMN3730U, DMN3730UFB, DMN3730UFB4

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