DMN3200U
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN3200U
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.65
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2.2
A
Cossⓘ -
Output Capacitance: 290
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09
Ohm
Package:
SOT23
DMN3200U
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN3200U
Datasheet (PDF)
..1. Size:146K diodes
dmn3200u.pdf 
DMN3200UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 90 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 110 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-
..2. Size:128K tysemi
dmn3200u.pdf
Product specificationDMN3200UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 90 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 110 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 200 m @ VGS = 1.5V
9.1. Size:341K diodes
dmn32d4sdw.pdf
DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 0.4 @ VGS = 10V 0.65A Fast Switching Speed 30V ESD Protected Gate 0.7 @ VGS = 4.5V 0.52A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G
9.2. Size:274K diodes
dmn32d2ldf.pdf
DMN32D2LDFCOMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Common Source Dual N-Channel MOSFET Case: SOT-353 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold
9.3. Size:178K diodes
dmn32d2lfb4.pdf
DMN32D2LFB4N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Con
9.4. Size:179K diodes
dmn32d2lv.pdf
DMN32D2LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitan
Datasheet: DMN3051LDM
, DMN3052L
, DMN3052LSS
, DMN3112S
, DMN3112SSS
, DMN3115UDM
, DMN3150L
, DMN3150LW
, STF13NM60N
, DMN32D2LDF
, DMN32D2LFB4
, DMN32D2LV
, DMN3300U
, DMN3404L
, DMN3730U
, DMN3730UFB
, DMN3730UFB4
.
