All MOSFET. APG180N04NF Datasheet

 

APG180N04NF Datasheet and Replacement


   Type Designator: APG180N04NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 180 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.7 nS
   Cossⓘ - Output Capacitance: 1510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm
   Package: PDFN5X6-8L
 

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APG180N04NF Datasheet (PDF)

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APG180N04NF

APG180N04NF 40V N-Channel Enhancement Mode MOSFET Description The APG180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS DR

Datasheet: APG40N10DF , APG40N10NF , APG40N10S , APG60N10D , APG60N10NF , APG130N06P , APG130N06T , APG130N06F , IRFP250 , APG20N06S , AP10N06S , AP10N10D , AP10N10S , AP10N15D , AP10N65F , AP10N65P , AP10P04D .

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