APG180N04NF Datasheet. Specs and Replacement

Type Designator: APG180N04NF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 68 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 1510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0015 Ohm

Package: PDFN5X6-8L

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APG180N04NF datasheet

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APG180N04NF

APG180N04NF 40V N-Channel Enhancement Mode MOSFET Description The APG180N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =180A DS D R ... See More ⇒

Detailed specifications: APG40N10DF, APG40N10NF, APG40N10S, APG60N10D, APG60N10NF, APG130N06P, APG130N06T, APG130N06F, IRFP450, APG20N06S, AP10N06S, AP10N10D, AP10N10S, AP10N15D, AP10N65F, AP10N65P, AP10P04D

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