APG20N06S Datasheet and Replacement
Type Designator: APG20N06S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 199.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOP8
APG20N06S substitution
APG20N06S Datasheet (PDF)
apg20n06s.pdf
APG20N06S 60V N-SGT Enhancement Mode MOSFET General Description APG20N06S use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifor
Datasheet: APG40N10NF , APG40N10S , APG60N10D , APG60N10NF , APG130N06P , APG130N06T , APG130N06F , APG180N04NF , RFP50N06 , AP10N06S , AP10N10D , AP10N10S , AP10N15D , AP10N65F , AP10N65P , AP10P04D , AP10P06MSI .
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