AP120N04P Datasheet. Specs and Replacement
Type Designator: AP120N04P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 528 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
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AP120N04P datasheet
ap120n04p ap120n04t.pdf
AP120N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP120N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R ... See More ⇒
ap120n04d.pdf
AP120N04D 40V N-Channel Enhancement Mode MOSFET Description The AP120N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =120 A DS D R ... See More ⇒
Detailed specifications: AP10N10D, AP10N10S, AP10N15D, AP10N65F, AP10N65P, AP10P04D, AP10P06MSI, AP10P10D, K4145, AP120N04T, AP120N06P, AP120N06T, AP120N08P, AP120N08T, AP12N40F, AP12N40P, AP12N65F
Keywords - AP120N04P MOSFET specs
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