AP4N65F Datasheet. Specs and Replacement

Type Designator: AP4N65F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 69.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO220F

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AP4N65F datasheet

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AP4N65F

AP4N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP4N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge... See More ⇒

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AP4N65F

AP4N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system General Features VDS =650V,ID =4A RDS(... See More ⇒

Detailed specifications: AP30N06T, AP40N20P, AP40N20T, AP45P06F, AP45P06P, AP45P06T, AP4N65D, AP4N65Y, IRLZ44N, AP4N65P, AP50N06BD, AP50N06BY, AP50N06P, AP50N06T, AP50P06P, AP50P06T, AP5G03S

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