AP5G03DF MOSFET Datasheet: NP-Ch, 30V, 8(7.2)A. Full specification with pinout and replacement list

AP5G03DF Specs and Replacement

Type Designator: AP5G03DF

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 12 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8(7.2) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2(10.8) nS

Cossⓘ - Output Capacitance: 55 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02(0.048) Ohm

Package: DFN3X3-8L

AP5G03DF substitution

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AP5G03DF datasheet

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AP5G03SIDF 30V N+P-Channel Enhancement Mode MOSFET Description The AP5G03S/DF uses advanced trench technology to provide excellent R and low gate charge . DS(ON) The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel V = 30V,I =8A DS D R ... See More ⇒

Detailed specifications: AP4N65P , AP50N06BD , AP50N06BY , AP50N06P , AP50N06T , AP50P06P , AP50P06T , AP5G03S , IRFB4115 , AP5N50F , AP5N50P , AP5N50T , AP60N03F , AP60N03T , AP60N03P , AP70P03P , AP70P03T .