AP7N65P Datasheet. Specs and Replacement

Type Designator: AP7N65P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 101 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

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AP7N65P datasheet

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AP7N65P

AP7N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge... See More ⇒

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AP7N65P

AP7N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP7N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge... See More ⇒

Detailed specifications: AP60N03F, AP60N03T, AP60N03P, AP70P03P, AP70P03T, AP7N65D, AP7N65Y, AP7N65F, IRF1010E, AP80N07P, AP80N07T, AP80N10P, AP80N10T, AP80P06P, AP80P06T, AP80P10P, AP80P10T

Keywords - AP7N65P MOSFET specs

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