AP7N65P MOSFET Datasheet: N-Ch, 650V, 7A. Full specification with pinout and replacement list

AP7N65P Specs and Replacement

Type Designator: AP7N65P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 101 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

AP7N65P substitution

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AP7N65P datasheet

..1. Size:1769K cn apm
ap7n65f ap7n65p.pdf pdf_icon

AP7N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP7N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge... See More ⇒

8.1. Size:1853K cn apm
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AP7N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP7N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge... See More ⇒

Detailed specifications: AP60N03F , AP60N03T , AP60N03P , AP70P03P , AP70P03T , AP7N65D , AP7N65Y , AP7N65F , IRF9540N , AP80N07P , AP80N07T , AP80N10P , AP80N10T , AP80P06P , AP80P06T , AP80P10P , AP80P10T .