AP9N90T PDF and Equivalents Search

 

AP9N90T Specs and Replacement

Type Designator: AP9N90T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 57 nS

Cossⓘ - Output Capacitance: 206 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO263

AP9N90T substitution

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AP9N90T datasheet

 ..1. Size:1187K  cn apm
ap9n90f ap9n90p ap9n90t.pdf pdf_icon

AP9N90T

AP9N90FIPIT 900V N-Channel Enhancement Mode MOSFET Description The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. ... See More ⇒

Detailed specifications: AP80P10P , AP80P10T , AP85N08BP , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , IRFB3607 , AP110N04D , AP120N02D , AP120N03D , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D .

Keywords - AP9N90T MOSFET specs

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