All MOSFET. AP9N90T Datasheet

 

AP9N90T Datasheet and Replacement


   Type Designator: AP9N90T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 57 nS
   Cossⓘ - Output Capacitance: 206 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO263
 

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AP9N90T Datasheet (PDF)

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AP9N90T

AP9N90FIPIT 900V N-Channel Enhancement Mode MOSFET Description The AP9N90F/T/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

Datasheet: AP80P10P , AP80P10T , AP85N08BP , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , IRF1407 , , , , , , , , .

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