AP120N03NF Datasheet. Specs and Replacement

Type Designator: AP120N03NF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: PDFN5X6-8L

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AP120N03NF substitution

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AP120N03NF datasheet

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AP120N03NF

AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒

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AP120N03NF

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AP120N03NF

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AP120N03NF

AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒

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Detailed specifications: AP90N06P, AP90N06T, AP9N90F, AP9N90P, AP9N90T, AP110N04D, AP120N02D, AP120N03D, CS150N03A8, AP120N04D, AP120N08NF, AP120N10NF, AP120P03D, AP12N06S, AP12N10Y, AP12P04S, AP13P06D

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