All MOSFET. AP12P04S Datasheet

 

AP12P04S Datasheet and Replacement


   Type Designator: AP12P04S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOP8
 

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AP12P04S Datasheet (PDF)

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AP12P04S

AP12P04S -40V P-Channel Enhancement Mode MOSFET Description The AP12P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-12A DS DR

Datasheet: AP120N03D , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , 2SK3568 , AP13P06D , AP13P06Y , AP13P20D , , , , , .

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