AP12P04S Specs and Replacement
Type Designator: AP12P04S
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 260 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: SOP8
AP12P04S substitution
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AP12P04S datasheet
ap12p04s.pdf
AP12P04S -40V P-Channel Enhancement Mode MOSFET Description The AP12P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-12A DS D R ... See More ⇒
Detailed specifications: AP120N03D , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , 4N60 , AP13P06D , AP13P06Y , AP13P20D , AP30P03DF , AP30P06D , AP30P10P , AP320N04TLG5 , AP3400AI .
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