AP12P04S Datasheet. Specs and Replacement

Type Designator: AP12P04S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP8

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AP12P04S datasheet

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AP12P04S

AP12P04S -40V P-Channel Enhancement Mode MOSFET Description The AP12P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-12A DS D R ... See More ⇒

Detailed specifications: AP120N03D, AP120N03NF, AP120N04D, AP120N08NF, AP120N10NF, AP120P03D, AP12N06S, AP12N10Y, IRFP250, AP13P06D, AP13P06Y, AP13P20D, AP30P03DF, AP30P06D, AP30P10P, AP320N04TLG5, AP3400AI

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