AP12P04S PDF and Equivalents Search

 

AP12P04S Specs and Replacement

Type Designator: AP12P04S

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 260 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOP8

AP12P04S substitution

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AP12P04S datasheet

 ..1. Size:1680K  cn apm
 ap12p04s.pdf pdf_icon

AP12P04S

AP12P04S -40V P-Channel Enhancement Mode MOSFET Description The AP12P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-12A DS D R ... See More ⇒

Detailed specifications: AP120N03D , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , 4N60 , AP13P06D , AP13P06Y , AP13P20D , AP30P03DF , AP30P06D , AP30P10P , AP320N04TLG5 , AP3400AI .

History: AP120N08P | AP3407AI | UF830Z | AP150N10T | AP3400AI

Keywords - AP12P04S MOSFET specs

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