AP90P03NF Datasheet and Replacement
Type Designator: AP90P03NF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 109 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 769 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0064 Ohm
Package: PDFN5X6-8L
AP90P03NF substitution
AP90P03NF Datasheet (PDF)
ap90p03nf.pdf
AP90P03NF -30V P-Channel Enhancement Mode MOSFET Description The AP90P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-90A DS DR
ap90p01d.pdf
AP90P01D 12V P-Channel Enhancement Mode MOSFET Description The AP90P01D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =12V I =90A DS DR
Datasheet: AP3401AI , AP3401MI , AP3404BI , AP3407AI , AP3407MI , AP3409MI , AP90N06F , AP90P01D , IRF1405 , AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , AP9P20D , APG100N10D .
Keywords - AP90P03NF MOSFET datasheet
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