AP9N20D Datasheet. Specs and Replacement

Type Designator: AP9N20D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 103 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO252

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AP9N20D datasheet

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AP9N20D

AP9N20D 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒

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AP9N20D

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AP9N20D

AP9N20P 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒

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AP9N20D

AP9N20Y 200V N-Channel Enhancement Mode MOSFET Description The AP9N20Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒

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Detailed specifications: AP3407MI, AP3409MI, AP90N06F, AP90P01D, AP90P03NF, AP9435A, AP9926A, AP9928A, AO4468, AP9N20P, AP9N20Y, AP9P20D, APG100N10D, APG110N10NF, APG120N10NF, APG120N12NF, APG130N06D

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