AP9P20D Specs and Replacement
Type Designator: AP9P20D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO252
AP9P20D substitution
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AP9P20D datasheet
ap9p20d.pdf
AP9P20D 200V P-Channel Enhancement Mode MOSFET Description The AP9P20D is silicon P-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒
Detailed specifications: AP90P01D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , IRF9640 , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AP7P15D , AP7P15Y .
Keywords - AP9P20D MOSFET specs
AP9P20D cross reference
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AP9P20D replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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