AP9P20D Datasheet and Replacement
Type Designator: AP9P20D
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 55 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 140 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
Package: TO252
AP9P20D substitution
AP9P20D Datasheet (PDF)
ap9p20d.pdf

AP9P20D 200V P-Channel Enhancement Mode MOSFET Description The AP9P20D is silicon P-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera
Datasheet: AP90P01D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , MMD60R360PRH , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , , .
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MOSFET: APG130N06NF | APG130N06D | APG120N12NF | APG120N10NF | APG110N10NF | APG100N10D | AP9P20D | AP9N20Y | AP9N20P | AP9N20D | AP9928A | AP9926A | AP9435A | AP90P03NF | AP90P01D | AP90N06F
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