All MOSFET. AP9P20D Datasheet

 

AP9P20D Datasheet and Replacement


   Type Designator: AP9P20D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.75 Ohm
   Package: TO252
 

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AP9P20D Datasheet (PDF)

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AP9P20D

AP9P20D 200V P-Channel Enhancement Mode MOSFET Description The AP9P20D is silicon P-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

Datasheet: AP90P01D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , AP9N20Y , MMD60R360PRH , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AP7P15D , AP7P15Y .

Keywords - AP9P20D MOSFET datasheet

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