APG130N06NF MOSFET Datasheet: N-Ch, 60V, 130A. Full specification with pinout and replacement list

APG130N06NF Specs and Replacement

Type Designator: APG130N06NF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 140 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 1666 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: PDFN5X6-8L

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APG130N06NF datasheet

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APG130N06NF 60V N-SGT Enhancement Mode MOSFET General Description APG130N06NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un... See More ⇒

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APG130N06D 60V N-SGT Enhancement Mode MOSFET General Description APG130N06D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unif... See More ⇒

5.2. Size:2025K cn apm
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