AP2320MI Datasheet and Replacement
Type Designator: AP2320MI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.2 nS
Cossⓘ - Output Capacitance: 162 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOT23
AP2320MI substitution
AP2320MI Datasheet (PDF)
ap2320mi.pdf
AP2320MI 20V N-Channel Enhancement Mode MOSFET Description The AP2320MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =8A DS DR
ap2320gn.pdf
AP2320GNHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe
ap2320n-hf.pdf
AP2320N-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23SGDDescriptionAP2320 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap2320gn-hf.pdf
AP2320GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Package Outline RDS(ON) 5 Surface Mount Device ID 0.25AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processingtechniques to achieve the lowest possible on-resist
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