ZXMN3A01F Specs and Replacement

Type Designator: ZXMN3A01F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.625 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: SOT23

ZXMN3A01F substitution

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ZXMN3A01F datasheet

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ZXMN3A01F

Product specification ZXMN3A01F 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0A DESCRIPTION This new generation of TRENCH MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 ... See More ⇒

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ZXMN3A01F

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ZXMN3A01F

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Detailed specifications: DMN4800LSS, DMN4800LSSL, DMS3016SFG, DMS3016SSSA, ZXM61N03F, ZXM62N03G, ZXMD63N03X, ZXMN3A01E6, IRFZ46N, ZXMN3A02N8, ZXMN3A02X8, ZXMN3A03E6, ZXMN3A04DN8, ZXMN3A04K, ZXMN3A06DN8, ZXMN3A14F, ZXMN3AMC

Keywords - ZXMN3A01F MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.