Справочник MOSFET. ZXMN3A01F

 

ZXMN3A01F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN3A01F
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Cossⓘ - Выходная емкость: 190 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для ZXMN3A01F

   - подбор ⓘ MOSFET транзистора по параметрам

 

ZXMN3A01F Datasheet (PDF)

 ..1. Size:193K  diodes
 zxmn3a01f.pdf pdf_icon

ZXMN3A01F

ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 ..2. Size:104K  tysemi
 zxmn3a01f.pdf pdf_icon

ZXMN3A01F

Product specificationZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from TY utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23

 0.1. Size:191K  zetex
 zxmn3a01ftc.pdf pdf_icon

ZXMN3A01F

ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 0.2. Size:191K  zetex
 zxmn3a01fta.pdf pdf_icon

ZXMN3A01F

ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... DMN4800LSS , DMN4800LSSL , DMS3016SFG , DMS3016SSSA , ZXM61N03F , ZXM62N03G , ZXMD63N03X , ZXMN3A01E6 , STP65NF06 , ZXMN3A02N8 , ZXMN3A02X8 , ZXMN3A03E6 , ZXMN3A04DN8 , ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC .

History: IXTP6N60 | TPU65R940C | NCEAP4065QU | IRFTS8342PBF | 2SK2595 | TPCA8A04-H | BUK9Y27-40B

 

 
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