Справочник MOSFET. ZXMN3A01F

 

ZXMN3A01F Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ZXMN3A01F
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.625 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2 A
   Cossⓘ - Выходная емкость: 190 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.18 Ohm
   Тип корпуса: SOT23
     - подбор MOSFET транзистора по параметрам

 

ZXMN3A01F Datasheet (PDF)

 ..1. Size:193K  diodes
 zxmn3a01f.pdf pdf_icon

ZXMN3A01F

ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 ..2. Size:104K  tysemi
 zxmn3a01f.pdf pdf_icon

ZXMN3A01F

Product specificationZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from TY utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23

 0.1. Size:191K  zetex
 zxmn3a01ftc.pdf pdf_icon

ZXMN3A01F

ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

 0.2. Size:191K  zetex
 zxmn3a01fta.pdf pdf_icon

ZXMN3A01F

ZXMN3A01F30V N-CHANNEL ENHANCEMENT MODE MOSFETSUMMARYV(BR)DSS = 30V; RDS(ON) = 0.12 ID = 2.0ADESCRIPTIONThis new generation of TRENCH MOSFETs from Zetex utilizes a unique structurethat combines the benefits of low on-resistance with fast switching speed. Thismakes them ideal for high efficiency, low voltage, power management applications.FEATURESSOT23 Low on-resistance

ПОКАЗАТЬ ЕЩЁ

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History: NCE3080I | 2SK4108 | CM20N50P | JCS2N60MB | 2SK2424 | P0908ATF | AP9997GP-HF

 

 
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