AP8814A Specs and Replacement

Type Designator: AP8814A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.8 nS

Cossⓘ - Output Capacitance: 155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: SOT23-6L

AP8814A substitution

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AP8814A datasheet

 ..1. Size:1197K  cn apm
 ap8814a.pdf pdf_icon

AP8814A

AP8814A 20V N+N hannel Enhancement Mode MOSFET Description D1 D2 The AP8814A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) G1 G2 operation with gate voltages as low as 2.5V. This S1 S2 device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I = 8A DS D R ... See More ⇒

 9.1. Size:1677K  allpower
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AP8814A

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Detailed specifications: AP50N06NF, AP50N10D, AP50N10P, AP50N20MP, AP80P10D, AP8205A-21, AP8205S, AP85N04NF, BS170, AP8H04DF, AP8H04S, AP8H06S, AP8N06SI, AP8N10MI, AP8P04MI, AP8P04S, AP8V06S

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