AP8814A Datasheet and Replacement
Type Designator: AP8814A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 155 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: SOT23-6L
AP8814A substitution
AP8814A Datasheet (PDF)
ap8814a.pdf
AP8814A 20V N+N hannel Enhancement Mode MOSFET Description D1D2The AP8814A uses advanced trench technology to provide excellent R , low gate charge and DS(ON)G1 G2operation with gate voltages as low as 2.5V. This S1 S2device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I = 8A DS DR
Datasheet: AP50N06NF , AP50N10D , AP50N10P , AP50N20MP , AP80P10D , AP8205A-21 , AP8205S , AP85N04NF , BS170 , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI , AP8N10MI , AP8P04MI , AP8P04S , AP8V06S .
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