All MOSFET. AP8N06SI Datasheet

 

AP8N06SI Datasheet and Replacement


   Type Designator: AP8N06SI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 58.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT89
 

 AP8N06SI substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP8N06SI Datasheet (PDF)

 ..1. Size:1595K  cn apm
 ap8n06si.pdf pdf_icon

AP8N06SI

AP8N06SI 60V N-Channel Enhancement Mode MOSFET Description The AP8N06SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8.5A DS DR

 9.1. Size:222K  ape
 ap8n010lm.pdf pdf_icon

AP8N06SI

AP8N010LMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 80VDD Simple Drive Requirement D RDS(ON) 10mD Fast Switching Characteristic ID3 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP8N010L series are from Advanced Power innovated design andsilicon process technolo

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

Keywords - AP8N06SI MOSFET datasheet

 AP8N06SI cross reference
 AP8N06SI equivalent finder
 AP8N06SI lookup
 AP8N06SI substitution
 AP8N06SI replacement

Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
Back to Top

 


 
.