All MOSFET. AP8N06SI Datasheet

 

AP8N06SI Datasheet and Replacement


   Type Designator: AP8N06SI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 58.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOT89
 

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AP8N06SI Datasheet (PDF)

 ..1. Size:1595K  cn apm
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AP8N06SI

AP8N06SI 60V N-Channel Enhancement Mode MOSFET Description The AP8N06SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8.5A DS DR

 9.1. Size:222K  ape
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AP8N06SI

AP8N010LMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower On-resistance BVDSS 80VDD Simple Drive Requirement D RDS(ON) 10mD Fast Switching Characteristic ID3 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8Description DAP8N010L series are from Advanced Power innovated design andsilicon process technolo

Datasheet: AP80P10D , AP8205A-21 , AP8205S , AP85N04NF , AP8814A , AP8H04DF , AP8H04S , AP8H06S , AO3401 , AP8N10MI , AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , , .

History: AP8N10MI | AP8V06S | AP8P04S | AP90N02NF | AP90N02D

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