AP8N06SI Specs and Replacement

Type Designator: AP8N06SI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 58.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOT89

AP8N06SI substitution

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AP8N06SI datasheet

 ..1. Size:1595K  cn apm
 ap8n06si.pdf pdf_icon

AP8N06SI

AP8N06SI 60V N-Channel Enhancement Mode MOSFET Description The AP8N06SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =8.5A DS D R ... See More ⇒

 9.1. Size:222K  ape
 ap8n010lm.pdf pdf_icon

AP8N06SI

AP8N010LM Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance BVDSS 80V D D Simple Drive Requirement D RDS(ON) 10m D Fast Switching Characteristic ID3 11.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP8N010L series are from Advanced Power innovated design and silicon process technolo... See More ⇒

Detailed specifications: AP80P10D, AP8205A-21, AP8205S, AP85N04NF, AP8814A, AP8H04DF, AP8H04S, AP8H06S, 2SK3568, AP8N10MI, AP8P04MI, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, AP15P06DF, AP15P10D

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