AP8N10MI Specs and Replacement

Type Designator: AP8N10MI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25.8 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT23

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AP8N10MI datasheet

 ..1. Size:1317K  cn apm
 ap8n10mi.pdf pdf_icon

AP8N10MI

AP8N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP8N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =8A DS D R ... See More ⇒

Detailed specifications: AP8205A-21, AP8205S, AP85N04NF, AP8814A, AP8H04DF, AP8H04S, AP8H06S, AP8N06SI, 10N65, AP8P04MI, AP8P04S, AP8V06S, AP90N02D, AP90N02NF, AP15P06DF, AP15P10D, AP16P01BF

Keywords - AP8N10MI MOSFET specs

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