All MOSFET. AP8N10MI Datasheet

 

AP8N10MI Datasheet and Replacement


   Type Designator: AP8N10MI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25.8 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: SOT23
 

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AP8N10MI Datasheet (PDF)

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AP8N10MI

AP8N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP8N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =8A DS D R

Datasheet: AP8205A-21 , AP8205S , AP85N04NF , AP8814A , AP8H04DF , AP8H04S , AP8H06S , AP8N06SI , 75N75 , AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , , , .

History: AP90N02D | AP8N06SI | AP8P04S

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