All MOSFET. AP1N10I Datasheet

 

AP1N10I Datasheet and Replacement


   Type Designator: AP1N10I
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: SOT23
 

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AP1N10I Datasheet (PDF)

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AP1N10I

AP1N10I 100V N-Channel Enhancement Mode MOSFET Description The AP1N10I uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =1.5A DS DR

Datasheet: AP15P10D , AP16P01BF , AP16P02S , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AO3400A , AP200N04NF , AP200N04TLG5 , AP200N10MP , AP200N15MP , AP200N15TLG1 , AP20G03GD , AP280N10MP , AP2N20MI .

History: HM100N03K | AP2320MI

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