AP1N10I Specs and Replacement

Type Designator: AP1N10I

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: SOT23

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AP1N10I datasheet

 ..1. Size:1583K  cn apm
 ap1n10i.pdf pdf_icon

AP1N10I

AP1N10I 100V N-Channel Enhancement Mode MOSFET Description The AP1N10I uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =1.5A DS D R ... See More ⇒

Detailed specifications: AP15P10D, AP16P01BF, AP16P02S, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, AP18P20P, AO3400A, AP200N04NF, AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI

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