All MOSFET. AP280N10MP Datasheet

 

AP280N10MP Datasheet and Replacement


   Type Designator: AP280N10MP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 461 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 280 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 1290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: TO247
 

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AP280N10MP Datasheet (PDF)

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AP280N10MP

AP280N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP280N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =280A DS DR

Datasheet: AP18P20P , AP1N10I , AP200N04NF , AP200N04TLG5 , AP200N10MP , AP200N15MP , AP200N15TLG1 , AP20G03GD , IRF830 , AP2N20MI , AP2N30MI , AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF .

History: AP9435GP-HF | 2SK3530-01MR | IRLU3715PBF | ET4410 | SWD4N70L

Keywords - AP280N10MP MOSFET datasheet

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