AP280N10MP Specs and Replacement

Type Designator: AP280N10MP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 461 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 280 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 1290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm

Package: TO247

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AP280N10MP datasheet

 ..1. Size:1006K  cn apm
 ap280n10mp.pdf pdf_icon

AP280N10MP

AP280N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP280N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =280A DS D R ... See More ⇒

Detailed specifications: AP18P20P, AP1N10I, AP200N04NF, AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, IRF830, AP2N20MI, AP2N30MI, AP2N7002A, AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF, AP30H04NF

Keywords - AP280N10MP MOSFET specs

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