AP2N20MI Specs and Replacement

Type Designator: AP2N20MI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: SOT23

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AP2N20MI datasheet

 ..1. Size:1244K  cn apm
 ap2n20mi.pdf pdf_icon

AP2N20MI

AP2N20MI 200V N-Channel Enhancement Mode MOSFET Description The AP2N20MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system General Features VDS =200V,ID =2A RDS(ON... See More ⇒

Detailed specifications: AP1N10I, AP200N04NF, AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, IRLB3034, AP2N30MI, AP2N7002A, AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF, AP30H04NF, AP30N02D

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