All MOSFET. AP2N30MI Datasheet

 

AP2N30MI Datasheet and Replacement


   Type Designator: AP2N30MI
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
   Package: SOT23
 

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AP2N30MI Datasheet (PDF)

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AP2N30MI

AP2N30MI 300V N-Channel Enhancement Mode MOSFET Description The AP2N30MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen

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AP2N30MI

AP2N3R7LYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Small Size & Ultra_Low RDS(ON) RDS(ON) 3.7m RoHS Compliant & Halogen-Free ID3 23.4AGDSDDDescriptionDAP2N3R7L series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possi

Datasheet: AP200N04NF , AP200N04TLG5 , AP200N10MP , AP200N15MP , AP200N15TLG1 , AP20G03GD , AP280N10MP , AP2N20MI , IRF9640 , AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF , AP30N02D , AP30N03DF .

History: HPD045N03CTA | 2SK3530-01MR | ET4410 | SM6020NSF | SWD4N70L | AP280N10MP | AP9435GP-HF

Keywords - AP2N30MI MOSFET datasheet

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