AP2N30MI Specs and Replacement

Type Designator: AP2N30MI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm

Package: SOT23

AP2N30MI substitution

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AP2N30MI datasheet

 ..1. Size:1129K  cn apm
 ap2n30mi.pdf pdf_icon

AP2N30MI

AP2N30MI 300V N-Channel Enhancement Mode MOSFET Description The AP2N30MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen... See More ⇒

 9.1. Size:63K  ape
 ap2n3r7lyt.pdf pdf_icon

AP2N30MI

AP2N3R7LYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20V D Small Size & Ultra_Low RDS(ON) RDS(ON) 3.7m RoHS Compliant & Halogen-Free ID3 23.4A G D S D D Description D AP2N3R7L series are from Advanced Power innovated design and silicon process technology to achieve the lowest possi... See More ⇒

Detailed specifications: AP200N04NF, AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI, IRF9640, AP2N7002A, AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF, AP30H04NF, AP30N02D, AP30N03DF

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.