AP2N30MI Datasheet and Replacement
Type Designator: AP2N30MI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 30 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: SOT23
AP2N30MI substitution
AP2N30MI Datasheet (PDF)
ap2n30mi.pdf
AP2N30MI 300V N-Channel Enhancement Mode MOSFET Description The AP2N30MI is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen
ap2n3r7lyt.pdf
AP2N3R7LYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS 20VD Small Size & Ultra_Low RDS(ON) RDS(ON) 3.7m RoHS Compliant & Halogen-Free ID3 23.4AGDSDDDescriptionDAP2N3R7L series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possi
Datasheet: AP200N04NF , AP200N04TLG5 , AP200N10MP , AP200N15MP , AP200N15TLG1 , AP20G03GD , AP280N10MP , AP2N20MI , IRF9640 , AP2N7002A , AP2P15MI , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF , AP30N02D , AP30N03DF .
History: HPD045N03CTA | 2SK3530-01MR | ET4410 | SM6020NSF | SWD4N70L | AP280N10MP | AP9435GP-HF
Keywords - AP2N30MI MOSFET datasheet
AP2N30MI cross reference
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AP2N30MI replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: HPD045N03CTA | 2SK3530-01MR | ET4410 | SM6020NSF | SWD4N70L | AP280N10MP | AP9435GP-HF
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