AP2N7002A Specs and Replacement

Type Designator: AP2N7002A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 11 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2 Ohm

Package: SOT23

AP2N7002A substitution

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AP2N7002A datasheet

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AP2N7002A

AP2N7002K-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 2 Surface Mount Device ID 450mA S RoHS Compliant & Halogen-Free SOT-23 G Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resist... See More ⇒

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AP2N7002A

AP2N7002KU Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60V D Small Package Outline RDS(ON) 2 Surface Mount Device ID 270mA S RoHS Compliant & Halogen-Free SOT-323 G D Description AP2N7002 series are from Advanced Power innovated design G and silicon process technology to achieve th... See More ⇒

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Detailed specifications: AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI, AP2N30MI, IRFB7545, AP2P15MI, AP300N04TLG5, AP30G03GD, AP30H04DF, AP30H04NF, AP30N02D, AP30N03DF, AP30N06D

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.