All MOSFET. AP2P15MI Datasheet

 

AP2P15MI Datasheet and Replacement


   Type Designator: AP2P15MI
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 23 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm
   Package: SOT23
 

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AP2P15MI Datasheet (PDF)

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AP2P15MI

AP2P15MI -150V P-Channel Enhancement Mode MOSFET Description The AP2P15MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-2.7A DS DR

Datasheet: AP200N10MP , AP200N15MP , AP200N15TLG1 , AP20G03GD , AP280N10MP , AP2N20MI , AP2N30MI , AP2N7002A , AON7403 , AP300N04TLG5 , AP30G03GD , AP30H04DF , AP30H04NF , AP30N02D , AP30N03DF , AP30N06D , AP30N06DF .

History: IRF7220PBF | F11S80C3

Keywords - AP2P15MI MOSFET datasheet

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