AP2P15MI Specs and Replacement

Type Designator: AP2P15MI

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16 nS

Cossⓘ - Output Capacitance: 23 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.78 Ohm

Package: SOT23

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AP2P15MI datasheet

 ..1. Size:1235K  cn apm
 ap2p15mi.pdf pdf_icon

AP2P15MI

AP2P15MI -150V P-Channel Enhancement Mode MOSFET Description The AP2P15MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -150V I =-2.7A DS D R ... See More ⇒

Detailed specifications: AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI, AP2N30MI, AP2N7002A, AON7403, AP300N04TLG5, AP30G03GD, AP30H04DF, AP30H04NF, AP30N02D, AP30N03DF, AP30N06D, AP30N06DF

Keywords - AP2P15MI MOSFET specs

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