AP55N10F Datasheet and Replacement
Type Designator: AP55N10F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.8 nS
Cossⓘ - Output Capacitance: 185.4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: TO220F
AP55N10F substitution
AP55N10F Datasheet (PDF)
ap55n10f.pdf
AP55N10F N-Channel Enhancement Mode MOSFET General Description The AP55N10F uses advanced trench technology to provide excellent R ,device is suitable for use as a DS(ON)Battery protection or in other Switching application. General Features V = 100V I = 55A DS DR
Datasheet: AP50P03D , AP50P03DF , AP50P03NF , AP50P04D , AP50P04DF , AP50P10D , AP50P10NF , AP50P10P , IRFP460 , AP5N04MI , AP5N06MI , AP5N10BI , AP5N10BSI , AP5N10MI , AP5N10SI , , .
History: AP5N06MI | AP5N10MI | AP5N10BSI | AP5N10BI | AP5N10SI | AP5N04MI
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History: AP5N06MI | AP5N10MI | AP5N10BSI | AP5N10BI | AP5N10SI | AP5N04MI
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MOSFET: AP5N10SI | AP5N10MI | AP5N10BSI | AP5N10BI | AP5N06MI | AP5N04MI | AP55N10F | AP50P10P | AP50P10NF | AP50P10D | AP50P04DF | AP50P04D | AP50P03NF | AP50P03DF | AP50P03D | AP30N10D
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