AP55N10F Specs and Replacement

Type Designator: AP55N10F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.8 nS

Cossⓘ - Output Capacitance: 185.4 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO220F

AP55N10F substitution

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AP55N10F datasheet

 ..1. Size:1816K  cn apm
 ap55n10f.pdf pdf_icon

AP55N10F

AP55N10F N-Channel Enhancement Mode MOSFET General Description The AP55N10F uses advanced trench technology to provide excellent R ,device is suitable for use as a DS(ON) Battery protection or in other Switching application. General Features V = 100V I = 55A DS D R ... See More ⇒

 9.1. Size:2411K  allpower
 ap55n03.pdf pdf_icon

AP55N10F

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Detailed specifications: AP50P03D, AP50P03DF, AP50P03NF, AP50P04D, AP50P04DF, AP50P10D, AP50P10NF, AP50P10P, IRFP460, AP5N04MI, AP5N06MI, AP5N10BI, AP5N10BSI, AP5N10MI, AP5N10SI, AP6N10MI, AP6N12MI

Keywords - AP55N10F MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.