AP5N10BI MOSFET Datasheet: N-Ch, 100V, 5A. Full specification with pinout and replacement list

AP5N10BI Specs and Replacement

Type Designator: AP5N10BI

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.5 nS

Cossⓘ - Output Capacitance: 30 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: SOT23

AP5N10BI substitution

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AP5N10BI datasheet

..1. Size:1018K cn apm
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AP5N10BI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BI uses advanced APM-SGTII technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5.0A DS D R ... See More ⇒

7.1. Size:1365K cn apm
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AP5N10BSI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BSI uses advanced Trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS D R ... See More ⇒

8.1. Size:1586K allpower
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