All MOSFET. SSC8K23GN2 Datasheet

 

SSC8K23GN2 Datasheet and Replacement


   Type Designator: SSC8K23GN2
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 180 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.099 Ohm
   Package: DFN2X2
 

 SSC8K23GN2 substitution

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SSC8K23GN2 Datasheet (PDF)

 ..1. Size:242K  afsemi
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SSC8K23GN2

SSC8K23GN2 P-Channel Enhancement Mode MOSFET with Schottky Diode Features Applications P-MOSFET Bidirectional blocking switch; DC-DC conversion applications; VDS VGS RDSon TYP ID Li-battery charging; 60mR@-4V5 -20V 8V 75mR@-2V5 -3.4A Pin configuration 105mR@-1V8 Top View Schottky VR IR VF IO 6 5 4 20V 15uA 410mV@1A 2A K G S Genera

 8.1. Size:542K  afsemi
 ssc8k21gn3.pdf pdf_icon

SSC8K23GN2

SSC8K21GN3 P-Channel Enhancement Mode MOSFET with Schottky Diode Features Applications P-MOSFET Li Battery Charging VDS VGS RDSon TYP ID High Side DC/DC Converter High Side Driver for Brushless DC Motor 105mR@-4V5 Power Management in Portable, Battery -20V 8V 130mR@-2V5 -2A Powered Devices 180mR@-1V8 Pin configuration Schottky Top View V

Datasheet: AP20N03D , AP20N06BD , AP20N06D , AP20N06S , AP20N10D , AP20P01BF , SSC8415GS6 , SSC8K21GN3 , IRF1010E , SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 , AP3410MI , AP3415A , AP35H04NF , AP3N06I , AP3N06MI .

History: AM4917P

Keywords - SSC8K23GN2 MOSFET datasheet

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 SSC8K23GN2 replacement

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