AP35H04NF Datasheet. Specs and Replacement

Type Designator: AP35H04NF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 192 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: PDFN5X6-8L

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AP35H04NF datasheet

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AP35H04NF

AP35H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP35H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =35A DS D R ... See More ⇒

Detailed specifications: SSC8415GS6, SSC8K21GN3, SSC8K23GN2, SSC8P20AN2, SSC8P22AN3, SSC8P22CN2, AP3410MI, AP3415A, AON7506, AP3N06I, AP3N06MI, AP3N10BI, AP3N50D, AP3P06AI, AP3P06BI, AP3P06LI, AP3P10MI

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