All MOSFET. AP35H04NF Datasheet

 

AP35H04NF Datasheet and Replacement


   Type Designator: AP35H04NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 192 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: PDFN5X6-8L
 

 AP35H04NF substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP35H04NF Datasheet (PDF)

 ..1. Size:1725K  cn apm
ap35h04nf.pdf pdf_icon

AP35H04NF

AP35H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP35H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =35A DS DR

Datasheet: SSC8415GS6 , SSC8K21GN3 , SSC8K23GN2 , SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 , AP3410MI , AP3415A , 2N7002 , AP3N06I , AP3N06MI , AP3N10BI , AP3N50D , AP3P06AI , AP3P06BI , AP3P06LI , AP3P10MI .

Keywords - AP35H04NF MOSFET datasheet

 AP35H04NF cross reference
 AP35H04NF equivalent finder
 AP35H04NF lookup
 AP35H04NF substitution
 AP35H04NF replacement

 

 
Back to Top

 


 
.