AP3N50D Datasheet and Replacement

   Type Designator: AP3N50D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 8 nC
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO252

 AP3N50D Transistor Equivalent Substitute - MOSFET Cross-Reference Search