AP3N50D Datasheet. Specs and Replacement

Type Designator: AP3N50D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 39 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO252

AP3N50D substitution

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AP3N50D datasheet

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AP3N50D

AP3N50D 500V N-Channel Enhancement Mode MOSFET Description The AP3N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera... See More ⇒

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AP3N50D

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AP3N50D

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AP3N50D

AP3N5R0MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 5m Low On-resistance D G RoHS Compliant & Halogen-Free D D S D Description AP3N5R0 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible ... See More ⇒

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Detailed specifications: SSC8P22AN3, SSC8P22CN2, AP3410MI, AP3415A, AP35H04NF, AP3N06I, AP3N06MI, AP3N10BI, AO4407, AP3P06AI, AP3P06BI, AP3P06LI, AP3P10MI, AP3P10S, AP40G03NF, AP40H04NF, AP40H10NF

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