AP3N50D Datasheet and Replacement
Type Designator: AP3N50D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 32.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 39 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO252
AP3N50D substitution
AP3N50D Datasheet (PDF)
ap3n50d.pdf

AP3N50D 500V N-Channel Enhancement Mode MOSFET Description The AP3N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera
Datasheet: SSC8P22AN3 , SSC8P22CN2 , AP3410MI , AP3415A , AP35H04NF , AP3N06I , AP3N06MI , AP3N10BI , IRFP450 , AP3P06AI , AP3P06BI , AP3P06LI , AP3P10MI , AP3P10S , AP40G03NF , AP40H04NF , AP40H10NF .
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