All MOSFET. AP40G03NF Datasheet

 

AP40G03NF Datasheet and Replacement


   Type Designator: AP40G03NF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 41.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10.8 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: PDFN5X6-8L

 AP40G03NF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP40G03NF Datasheet (PDF)

 ..1. Size:1803K  cn apm
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AP40G03NF

AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP40G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =42A DS D R

 9.1. Size:94K  ape
 ap40g120w.pdf pdf_icon

AP40G03NF

AP40G120W RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features C VCES 1200V Advanced IGBT Technology IC 40A Low Saturation Voltage VCE(sat)=3.15V@IC=40A C G Industry Standard TO-3P Package G TO-3P C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gate-E

Datasheet: AP3N06MI , AP3N10BI , AP3N50D , AP3P06AI , AP3P06BI , AP3P06LI , AP3P10MI , AP3P10S , 10N65 , AP40H04NF , AP40H10NF , ATM06P50TC , ATM10N10SQ , ATM10N65TF , ATM1205PSI , ATM2300NSA , ATM2301PSC .

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