AP40G03NF Datasheet. Specs and Replacement

Type Designator: AP40G03NF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10.8 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: PDFN5X6-8L

AP40G03NF substitution

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AP40G03NF datasheet

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 ap40g03nf.pdf pdf_icon

AP40G03NF

AP40G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP40G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =42A DS D R ... See More ⇒

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 ap40g120w.pdf pdf_icon

AP40G03NF

AP40G120W RoHS-compliant Product Advanced Power N-CHANNEL INSULATED GATE Electronics Corp. BIPOLAR TRANSISTOR Features C VCES 1200V Advanced IGBT Technology IC 40A Low Saturation Voltage VCE(sat)=3.15V@IC=40A C G Industry Standard TO-3P Package G TO-3P C E E Absolute Maximum Ratings Symbol Parameter Rating Units VCES Collector-Emitter Voltage 1200 V VGE Gate-E... See More ⇒

Detailed specifications: AP3N06MI, AP3N10BI, AP3N50D, AP3P06AI, AP3P06BI, AP3P06LI, AP3P10MI, AP3P10S, 10N65, AP40H04NF, AP40H10NF, ATM06P50TC, ATM10N10SQ, ATM10N65TF, ATM1205PSI, ATM2300NSA, ATM2301PSC

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.