All MOSFET. ZXMN3F318DN8 Datasheet

 

ZXMN3F318DN8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN3F318DN8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 7.3 A
   Qgⓘ - Total Gate Charge: 12.9 nC
   Cossⓘ - Output Capacitance: 608 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: SO8

 ZXMN3F318DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN3F318DN8 Datasheet (PDF)

 6.1. Size:427K  diodes
 zxmn3f31dn8.pdf

ZXMN3F318DN8 ZXMN3F318DN8

ZXMN3F31DN830V SO8 dual N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.024 @ VGS= 10V 7.30.039 @ VGS= 4.5V 5.7DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD1 D2 Low on-resistance 4.5V gate drive capabilityG1 G2Applications DC-DC ConvertersS1 S2 Po

 7.1. Size:411K  diodes
 zxmn3f30fh.pdf

ZXMN3F318DN8 ZXMN3F318DN8

ZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Converters Power m

 7.2. Size:106K  tysemi
 zxmn3f30fh.pdf

ZXMN3F318DN8 ZXMN3F318DN8

Product specificationZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from TY features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Con

 7.3. Size:408K  zetex
 zxmn3f30fhta.pdf

ZXMN3F318DN8 ZXMN3F318DN8

ZXMN3F30FH30V SOT23 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) () ID (A)30 0.047 @ VGS= 10V 4.60.065 @ VGS= 4.5V 4.0DescriptionThis new generation Trench MOSFET from Zetex features low on-resistance achievable with 4.5V gate drive.FeaturesD Low on-resistance 4.5V gate drive capability SOT23GApplicationsS DC-DC Converters Power m

 7.4. Size:1447K  cn vbsemi
 zxmn3f30fh.pdf

ZXMN3F318DN8 ZXMN3F318DN8

ZXMN3F30FHwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Datasheet: ZXMN3A04K , ZXMN3A06DN8 , ZXMN3A14F , ZXMN3AMC , ZXMN3B01F , ZXMN3B04N8 , ZXMN3B14F , ZXMN3F30FH , IRF9640 , ZXMN3F31DN8 , ZXMN3G32DN8 , 2N7002(Z) , 2N7002A , STU442S , 2N7002E , STU441S , STU446S .

History: IXFA16N50P

 

 
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