AP5N15MSI Datasheet and Replacement
Type Designator: AP5N15MSI
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.3 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm
Package: SOT223
AP5N15MSI Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP5N15MSI Datasheet (PDF)
ap5n15msi.pdf
AP5N15MSI 150V N-Channel Enhancement Mode MOSFET Description The AP5N15MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =5A DS D R
ap5n10mi.pdf
AP5N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR
Datasheet: ATM1205PSI , ATM2300NSA , ATM2301PSC , ATM2302NSA , ATM2305PSA , ATM2310NSA , ATM2320KNSA , AP4959A , 75N75 , AP5N20D , AP5N20D-H , AP5N30D , ATM2320KNSQ , ATM2602NSG , ATM2604KNSG , ATM2N65TD , ATM3003PSA .
History: ATM2320KNSA
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History: ATM2320KNSA
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