AP5N15MSI - Даташиты. Аналоги. Основные параметры

AP5N15MSI 150V N-Channel Enhancement Mode MOSFET Description The AP5N15MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =5A DS D R

AP5N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

AP5N10SI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR

AP5N10BI100V N-Channel Enhancement Mode MOSFETDescriptionThe AP5N10BI uses advanced APM-SGTII technologyto provide excellent R , low gate charge andDS(ON)operation with gate voltages as low as 4.5V. Thisdevice is suitable for use as a Battery protectionor in other Switching application.General FeaturesV = 100V I =5.0ADS DR

AP5N10BSI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10BSI uses advanced Trench technologyto provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS DR