All MOSFET. ATM2604KNSG Datasheet

 

ATM2604KNSG Datasheet and Replacement


   Type Designator: ATM2604KNSG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23-6

 ATM2604KNSG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ATM2604KNSG Datasheet (PDF)

 ..1. Size:822K  agertech
 atm2604knsg.pdf pdf_icon

ATM2604KNSG

ATM2604KNSG20V N-Channel Enhancement Mode MOSFETDescriptionsThe ATM2604KNSG uses advanced trench technology toprovide excellent RDS(ON) , low gate charge and operationwith gate voltages as low as 2.5V. This device is suitable forSchematic diagramuse as a load switch or in PWM applications .Features R

 8.1. Size:1378K  agertech
 atm2602nsg.pdf pdf_icon

ATM2604KNSG

ATM2602NSG Dual N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage: 20V Continuous Drain Current: 3A Features SOT-23-6L Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R 65m ( V =4.5V) DS(ON) GS R 85m ( V =2.5V) DS(ON) GSApplication Driver for Relay, Solenoid, Motor, LED etc. Power supply converters circuit

 8.2. Size:795K  agertech
 atm2601psg.pdf pdf_icon

ATM2604KNSG

ATM2601PSG P-Channel Enhancement Mode Power MOSFET Drain-Source Voltage -20V Continuous Drain Current -2.8A FEATURES SOT23-6 VDS = -20V,ID = -2.8A R

Datasheet: ATM2320KNSA , AP4959A , AP5N15MSI , AP5N20D , AP5N20D-H , AP5N30D , ATM2320KNSQ , ATM2602NSG , IRFZ48N , ATM2N65TD , ATM3003PSA , ATM3400NSA , ATM3401APSA , ATM3401PSA , AP6H03S , AP6N03LI , AP6N03SI .

History: ATM2N65TD

Keywords - ATM2604KNSG MOSFET datasheet

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