All MOSFET. AP6H03S Datasheet

 

AP6H03S Datasheet and Replacement


   Type Designator: AP6H03S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8
 

 AP6H03S substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP6H03S Datasheet (PDF)

 ..1. Size:1825K  cn apm
 ap6h03s.pdf pdf_icon

AP6H03S

AP6H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP6H03S uses advanced trench D1D2technology to provide excellent R and low gate charge . DS(ON)The complementary MOSFETs may be used to form a G1 G2level shifted high side switch, and for a host of other applications S1 S2General Features N-Channel V = 30V,I =7.5A DS DR

Datasheet: ATM2320KNSQ , ATM2602NSG , ATM2604KNSG , ATM2N65TD , ATM3003PSA , ATM3400NSA , ATM3401APSA , ATM3401PSA , HY1906P , AP6N03LI , AP6N03SI , AP6N04SI , AP70P03NF , AP7N50D , AP80P06NF , , .

History: AP80P06NF | AP70P03NF

Keywords - AP6H03S MOSFET datasheet

 AP6H03S cross reference
 AP6H03S equivalent finder
 AP6H03S lookup
 AP6H03S substitution
 AP6H03S replacement

 

 
Back to Top

 


 
.