AP6H03S Datasheet. Specs and Replacement

Type Designator: AP6H03S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOP8

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AP6H03S datasheet

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AP6H03S

AP6H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP6H03S uses advanced trench D1 D2 technology to provide excellent R and low gate charge . DS(ON) The complementary MOSFETs may be used to form a G1 G2 level shifted high side switch, and for a host of other applications S1 S2 General Features N-Channel V = 30V,I =7.5A DS D R ... See More ⇒

Detailed specifications: ATM2320KNSQ, ATM2602NSG, ATM2604KNSG, ATM2N65TD, ATM3003PSA, ATM3400NSA, ATM3401APSA, ATM3401PSA, AON7403, AP6N03LI, AP6N03SI, AP6N04SI, AP70P03NF, AP7N50D, AP80P06NF, AP20P02BF, AP20P02D

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