All MOSFET. AP6H03S Datasheet

 

AP6H03S Datasheet and Replacement


   Type Designator: AP6H03S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 4.1 nC
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOP8

 AP6H03S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP6H03S Datasheet (PDF)

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AP6H03S

AP6H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP6H03S uses advanced trench D1D2technology to provide excellent R and low gate charge . DS(ON)The complementary MOSFETs may be used to form a G1 G2level shifted high side switch, and for a host of other applications S1 S2General Features N-Channel V = 30V,I =7.5A DS DR

Datasheet: ATM2320KNSQ , ATM2602NSG , ATM2604KNSG , ATM2N65TD , ATM3003PSA , ATM3400NSA , ATM3401APSA , ATM3401PSA , AON7403 , AP6N03LI , AP6N03SI , AP6N04SI , AP70P03NF , AP7N50D , AP80P06NF , AP20P02BF , AP20P02D .

History: ATM3401PSA

Keywords - AP6H03S MOSFET datasheet

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