All MOSFET. AP25N04S Datasheet

 

AP25N04S Datasheet and Replacement


   Type Designator: AP25N04S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 193 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP8

 AP25N04S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP25N04S Datasheet (PDF)

 ..1. Size:1696K  cn apm
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AP25N04S

AP25N04S 40V N-Channel Enhancement Mode MOSFET Description The AP25N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =25A DS DR

 7.1. Size:1494K  cn apm
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AP25N04S

AP25N04D 40V N-Channel Enhancement Mode MOSFET Description The AP25N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =25A DS DR

 8.1. Size:1968K  allpower
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AP25N04S

 8.2. Size:725K  allpower
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AP25N04S

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Datasheet: AP20P04D , AP220N08TLG1 , AP220N10MP , AP2222D , AP25G02NF , AP25G03GD , AP25G04GD , AP25N04D , IRFZ44 , AP4406A , AP4406B , AP4407A , AP4407B , AP4409A , AP4435A , AP4435B , AP45P06D .

History: AP25N04D

Keywords - AP25N04S MOSFET datasheet

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