AP25N04S Datasheet: MOSFET, N-Ch, 40V, 25.5A. Full specification with pinout and replacement list

AP25N04S Datasheet. Specs and Replacement

Type Designator: AP25N04S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.6 nS

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: SOP8

AP25N04S substitution

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AP25N04S datasheet

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AP25N04S 40V N-Channel Enhancement Mode MOSFET Description The AP25N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =25A DS D R ... See More ⇒

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AP25N04D 40V N-Channel Enhancement Mode MOSFET Description The AP25N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =25A DS D R ... See More ⇒

8.1. Size:1968K allpower
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