AP4606C Datasheet and Replacement. Cross Reference Search

AP4606C Datasheet (PDF)

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AP4606C 20V N+P-Channel Enhancement Mode MOSFET Description The AP4606C uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS DR

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AP4606CS / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channelVDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)

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AP4606PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125AG RoHS Compliant & Halogen-FreeSDescriptionAP4606 series are from Advanced Power innovated designand silicon process technology to achieve the lowes

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AP4606B 30V N+P-Channel Enhancement Mode MOSFET Description The AP4606B uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.2A DS DR

Datasheet: AP4406B , AP4407A , AP4407B , AP4409A , AP4435A , AP4435B , AP45P06D , AP45P06NF , 7N65 , AP4953A , AP4953B , AP5N40D , AP5N50BD , AP5N50D , , , .