AP4606C Datasheet. Specs and Replacement

Type Designator: AP4606C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 49 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOP8

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AP4606C datasheet

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AP4606C

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AP4606C

AP4606C 20V N+P-Channel Enhancement Mode MOSFET Description The AP4606C uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS D R ... See More ⇒

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AP4606C

AP4606CS / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)... See More ⇒

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AP4606C

AP4606P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125A G RoHS Compliant & Halogen-Free S Description AP4606 series are from Advanced Power innovated design and silicon process technology to achieve the lowes... See More ⇒

Detailed specifications: AP4406B, AP4407A, AP4407B, AP4409A, AP4435A, AP4435B, AP45P06D, AP45P06NF, 10N60, AP4953A, AP4953B, AP5N40D, AP5N50BD, AP5N50D, ATM3407PSA, ATM3415KPSA, ATM6402NSA

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