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AP4606C Spec and Replacement


   Type Designator: AP4606C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 42 nS
   Cossⓘ - Output Capacitance: 49 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: SOP8

 AP4606C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP4606C Specs

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AP4606C

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AP4606C

AP4606C 20V N+P-Channel Enhancement Mode MOSFET Description The AP4606C uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.5A DS D R ... See More ⇒

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AP4606C

AP4606CS / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channel VDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)... See More ⇒

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AP4606C

AP4606P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125A G RoHS Compliant & Halogen-Free S Description AP4606 series are from Advanced Power innovated design and silicon process technology to achieve the lowes... See More ⇒

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Detailed specifications: AP4406B , AP4407A , AP4407B , AP4409A , AP4435A , AP4435B , AP45P06D , AP45P06NF , 10N60 , AP4953A , AP4953B , AP5N40D , AP5N50BD , AP5N50D , ATM3407PSA , ATM3415KPSA , ATM6402NSA .

Keywords - AP4606C MOSFET specs

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